Optical properties of some III–V strained-layer superlattices
- 31 December 1989
- journal article
- research article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 5 (1), 51-58
- https://doi.org/10.1016/0749-6036(89)90067-0
Abstract
No abstract availableThis publication has 33 references indexed in Scilit:
- Work hardening and strain relaxation in strained-layer buffersApplied Physics Letters, 1988
- Critical Stresses forStrained-Layer PlasticityPhysical Review Letters, 1987
- Theory of the hole subband dispersion in strained and unstrained quantum wellsPhysical Review B, 1986
- Growth and properties of Si/SiGe superlatticesSurface Science, 1986
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Ion channeling studies of InGaAs/GaAs strained-layer superlatticesApplied Physics Letters, 1983
- Electronic structure of GaAsxP1−x/GaP strained-layer superlattices with x<0.5Journal of Vacuum Science and Technology, 1982
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- Piezo-Electroreflectance in Ge, GaAs, and SiPhysical Review B, 1968