Ion channeling studies of InGaAs/GaAs strained-layer superlattices

Abstract

The first ion channeling studies of the InxGa1−xAs/GaAs strained-layer superlattice (SLS) system are reported. The strong orientation dependence of the dechanneling for both axial and planar directions relative to the [100] growth axis indicates that the ≊1% lattice mismatch is accommodated by lattice strain. Tetragonal distortions along the growth direction give rise to alternating tilts for inclined crystal directions which result in significant [110] and (1̄10) dechanneling. Measurements for 40-layer structures with different In concentrations demonstrate that the channeling technique is a depth-sensitive probe of the degree of strain in SLS systems.