Systematic investigation of picosecond photoinduced absorption in hydrogenated amorphous silicon
- 15 August 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (4), 3023-3026
- https://doi.org/10.1103/physrevb.34.3023
Abstract
A systematic study of the dependence of picosecond photoinduced absorption (PA) and transmission in hydrogenated amorphous silicon on sample thickness, doping concentration, and excitation intensity has been undertaken. Investigations demonstrated that the picosecond PA decays are not caused by recombination at the sample surface nor by deep trapping. The decays are consistent with thermalization within the band tails and doping-induced band-tail states.Keywords
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