Transport and cyclotron resonance theory for GaAs-AlGaAs heterostructures
- 1 March 1986
- journal article
- research article
- Published by Springer Nature in Zeitschrift für Physik B Condensed Matter
- Vol. 63 (1), 1-8
- https://doi.org/10.1007/bf01312572
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
- Two-dimensional electron gas systems at semiconductor interfacesSurface Science, 1985
- Molecular beam epitaxial growth and transport properties of modulation-doped AlGaAs-GaAs heterostructuresApplied Physics Letters, 1985
- Cyclotron resonance of two-dimensional electrons in AlxGa1−xAs/GaAs heterojunctionSurface Science, 1984
- Transport properties of selectively doped GaAs-(AlGa)As heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1984
- Improved Electron Mobility Higher than 106 cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBEJapanese Journal of Applied Physics, 1983
- Subband-Landau-Level Coupling in a Two-Dimensional Electron GasPhysical Review Letters, 1983
- Observation of oscillatory linewidth in the cyclotron resonance of GaAsAlxGa1−xAs heterostructuresSolid State Communications, 1983
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Far-infrared cyclotron resonance of two-dimensional electrons in an AlxGa1−xAs/GaAs heterojunctionSurface Science, 1982
- Cyclotron resonance linewidth in selectively doped GaAs-AlxGa1−xAs heterojunctionsApplied Physics Letters, 1981