Interband transitions in strain-symmetrizedsuperlattices
- 8 October 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 65 (15), 1933-1936
- https://doi.org/10.1103/physrevlett.65.1933
Abstract
We present experimental as well as theoretical data for the linear-optical response of symmetrically strained [001] superlattices. Ab initio calculations show that they have a direct gap. The complex dielectric function has been measured ellipsometrically. Agreement of the experimental second-derivative spectrum /d with the theory is obtained, both for the shape and position of bulklike transitions and for new superlatticelike transitions, after including lifetime effects in the calculated curves through Lorentzian convolution.
Keywords
This publication has 26 references indexed in Scilit:
- Calculated deformation potentials in Si, Ge, and GeSiSolid State Communications, 1990
- Relativistic band structure of Si, Ge, and GeSi: Inversion-asymmetry effectsPhysical Review B, 1990
- Photoluminescence in short-period Si/Ge strained-layer superlatticesPhysical Review Letters, 1990
- Structure and optical properties of strained Ge-Si superlattices grown on (001) GePhysical Review Letters, 1989
- Band-edge states in short-period (GaAs/(AlAssuperlatticesPhysical Review B, 1989
- Electronic structure of Ge/Si monolayer strained-layer superlatticesPhysical Review B, 1989
- Electronic properties of the (100) (Si)/(Ge) strained-layer superlatticesPhysical Review B, 1988
- Symmetrically strained Si/Ge superlattices on Si substratesPhysical Review B, 1988
- Linear methods in band theoryPhysical Review B, 1975
- Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structureApplied Physics A, 1974