Structure and optical properties of strained Ge-Si superlattices grown on (001) Ge
- 6 November 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 63 (19), 2104-2107
- https://doi.org/10.1103/physrevlett.63.2104
Abstract
Ge-Si strained-layer superlattices have been synthesized on (001) Ge with unit-cell periodicity of ten atomic monolayers along the growth direction. Microstructural characterization establishes extended planar superlattice layering. X-ray diffraction is used to measure the superlattice composition. Optical reflectance spectra show new optical transitions at energies theoretically predicted for superlattice-induced direct optical transitions at the center of the Brillouin zone.Keywords
This publication has 23 references indexed in Scilit:
- Electronic structure of Ge/Si monolayer strained-layer superlatticesPhysical Review B, 1989
- Electronic properties of the (100) (Si)/(Ge) strained-layer superlatticesPhysical Review B, 1988
- Electronic Structure and Optical Properties of Si-Ge SuperlatticesPhysical Review Letters, 1988
- Electronic structures of strained-layer superlattices (Si)2n/(Si1−xGex)2n (100) with n=1–10Applied Physics Letters, 1988
- Theory of optical transitions in Si/Ge(001) strained-layer superlatticesPhysical Review B, 1987
- New optical transitions in strained Si-Ge superlatticesPhysical Review B, 1987
- Indirect, quasidirect, and direct optical transitions in the pseudomorphic (44)-monolayer Si-Ge strained-layer superlattice on Si(001)Physical Review B, 1987
- Long-Range Order and Segregation in Semiconductor SuperlatticesPhysical Review Letters, 1987
- Structurally induced optical transitions in Ge-Si superlatticesPhysical Review Letters, 1987
- Electroreflectance spectroscopy of Si-quantum-well structuresPhysical Review B, 1986