The characteristics of the copper-induced 1.35 eV emission band in p-GaAs
- 16 May 1975
- journal article
- research article
- Published by Wiley in physica status solidi (a)
- Vol. 29 (1), 339-345
- https://doi.org/10.1002/pssa.2210290138
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Temperature quenching of the copper-induced 1.35 eV emission band in p-GaAsphysica status solidi (a), 1974
- The temperature quenching of the 1.28 to 1.30 eV emission band in n-GaAsphysica status solidi (a), 1974
- Radiative recombination at donor-acceptor pairs and at higher associatesJournal of Luminescence, 1973
- The 0.94, 1.01, and 1.29 eV luminescence bands in laser-excited n-GaAsphysica status solidi (a), 1973
- Effect of heat treatment on the 0.93, 1.0, and 1.28 ev luminescence bands in n-GaAsphysica status solidi (a), 1973
- The characteristics of the 0.93 to 1.0 ev luminescence bands in GaAsphysica status solidi (a), 1971
- Donor—acceptor pairs in semiconductorsPhysica Status Solidi (b), 1968
- The role of acceptors in the luminescence of n-type GaAsJournal of Physics and Chemistry of Solids, 1967