Effect of heat treatment on the 0.93, 1.0, and 1.28 ev luminescence bands in n-GaAs
- 16 January 1973
- journal article
- Published by Wiley in physica status solidi (a)
- Vol. 15 (1), 287-293
- https://doi.org/10.1002/pssa.2210150132
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Effect of heat treatment on the 0.93 eV luminescence band in p-GaAsphysica status solidi (a), 1972
- The characteristics of the 0.93 to 1.0 ev luminescence bands in GaAsphysica status solidi (a), 1971
- Vacancy Association of Defects in Annealed GaAsApplied Physics Letters, 1971
- Calculations of point defect concentrations and nonstoichiometry in GaAsJournal of Physics and Chemistry of Solids, 1971
- The 0.93 and 1.02 eV luminescence in p-GaAsphysica status solidi (a), 1970
- Recombination and Trapping Processes at Deep Centers in N-Type GaAsJapanese Journal of Applied Physics, 1967
- Effect of arsenic pressure on solubility of copper in GaAsJournal of Physics and Chemistry of Solids, 1965
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964