Impurity Gradients in Te-Doped GaP Liquid Phase Epitaxy Layers
- 1 July 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (8), 3554-3555
- https://doi.org/10.1063/1.1659464
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Distribution of Impurities in Zn,O-Doped GaP Liquid Phase Epitaxy LayersJournal of the Electrochemical Society, 1970
- GaP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7%Applied Physics Letters, 1969
- Solubility and Electrical Behavior of Zinc, Sulfur, Selenium, and Tellurium in Gallium PhosphideJournal of the Electrochemical Society, 1965
- Solubility of III–V Compound Semiconductors in Column III LiquidsJournal of the Electrochemical Society, 1963
- Thermodynamics of binary semiconductor-metal alloysJournal of Physics and Chemistry of Solids, 1962
- Niobium Solid Electrolyte CapacitorsJournal of the Electrochemical Society, 1962