Vacuum chemical epitaxy utilizing organometallic sources
- 1 May 1986
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 15 (3), 175-180
- https://doi.org/10.1007/bf02655333
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Measurement of a long diffusion length in a GaAs film improved by metalorganic-chemical-vapor-deposition source purificationsJournal of Applied Physics, 1985
- High-efficiency GaAs0.7P0.3 solar cell on a transparent GaP waferJournal of Applied Physics, 1985
- GaAs growth in metal–organic MBEJournal of Vacuum Science & Technology B, 1985
- Growth of InP, GaAs, and In0.53Ga0.47As by chemical beam epitaxyJournal of Vacuum Science & Technology B, 1985
- Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasersJournal of Vacuum Science & Technology B, 1985
- Epitaxial films grown by vacuum MOCVDJournal of Crystal Growth, 1984
- MBE Growth of High-Quality InP Using Triethylindium as an Indium SourceJapanese Journal of Applied Physics, 1984
- Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga sourceJournal of Applied Physics, 1984
- A new low temperature III–V multilayer growth technique: Vacuum metalorganic chemical vapor depositionJournal of Applied Physics, 1981
- On the use of AsH3 in the molecular beam epitaxial growth of GaAsApplied Physics Letters, 1981