Photoluminescence Study of the Gallium Defect Spectrum at ≈ 1.049 ev (Ga2) in Irradiated Silicon
- 1 September 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 137 (1), 305-317
- https://doi.org/10.1002/pssb.2221370131
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Gallium-related 0.875-eV photoluminescence defect spectrum in irradiated siliconPhysical Review B, 1985
- The defect luminescence spectrum at 0.9351 eV in carbon-doped heat-treated or irradiated siliconJournal of Physics C: Solid State Physics, 1985
- Luminescence of traps in electron-irradiated gallium-doped siliconPhysical Review B, 1982
- Aluminum and gallium impurity effects on the photoluminescence from electron irradiated, pulled siliconSolid State Communications, 1974
- Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation ProcessesPhysical Review B, 1961
- Shallow Impurity States in Silicon and GermaniumPublished by Elsevier ,1957