Low-temperature GaAs epitaxial growth using electron-cyclotron resonance/metalorganic-molecular-beam epitaxy

Abstract

A low‐temperature GaAs epitaxial growth method called electron‐cyclotron resonance molecular‐beam epitaxy was newly developed. Triethylgallium (TEGa) and triethylarsine (TEAs) were used as source gases and were introduced without thermal decomposition. The method has the advantage of cleaning the GaAs substrate at the growth temperature just prior to growth as well as to decompose metalorganics with the hydrogen plasma activated by the cyclotron resonance. The epitaxial GaAs film was successfully grown at a temperature as low as 300 °C. All samples grown at 400 °C exhibited p‐type conductivity for (arsine/gallium) ratios between 4 and 13. The p‐type carrier concentration was strongly dependent on the (arsine/gallium) ratio and was in the range of 10¹⁶ –10¹⁹ cm⁻³ .