Active feedback lightwave receivers
- 1 October 1986
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 4 (10), 1502-1508
- https://doi.org/10.1109/jlt.1986.1074659
Abstract
This paper describes new p-i-n-FET lightwave receivers that achieve high sensitivity without signal integration, and dynamic ranges large enough that they cannot be saturated by present lightwave transmitters. IC versions can be realized inexpensively in standard fine-line NMOS, CMOS, or GaAs IC technologies, and thus are suitable for loop-plant, local-area-network, and data link applications, as well as long-haul transmission applications. These receivers also can readily be designed for bit-rates in excess of 1 Gbit/s for high-capacity systems. In addition, these receivers can be implemented on the same IC as other system functions, e.g., for single-chip lightwave regenerators and lightwave modems, and, eventually, for microprocessors with on-chip optical communications ports.Keywords
This publication has 11 references indexed in Scilit:
- A single chip NMOS preamplifier for optical fiber receiversPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- 1 Gbit/s transmission experiment over 101 km of single-mode fibre using a 1.55 μm ridge guide C3 laserElectronics Letters, 1983
- Optimized MOSFETs with subquartermicron channel lengthsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- Wide-dynamic-range fiber optic receiversPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- Experimental comparison of a germanium avalanche photodiode and InGaAs PINFET receiver for longer wavelength optical communication systemsElectronics Letters, 1982
- Long-wavelength optical receiver using a short channel Si-MOSFETIEEE Journal of Quantum Electronics, 1981
- Noise Caused by GaAs MESFETs in Optical ReceiversBell System Technical Journal, 1981
- Monolithic GaAs direct-coupled amplifiersIEEE Transactions on Electron Devices, 1981
- Excess-noise and receiver sensitivity measurements of In0.53Ga0.47As/InP avalanche photodiodesElectronics Letters, 1981
- GaAs f.e.t. transimpedance front-end design for a wideband optical receiverElectronics Letters, 1979