Subbands in back-gated heterojunctions
- 31 October 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 48 (2), 151-154
- https://doi.org/10.1016/0038-1098(83)90947-x
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature MobilityJournal of the Physics Society Japan, 1982
- Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunction. I. Subband Structure and Light-Scattering SpectraJournal of the Physics Society Japan, 1982
- Electrical Properties of Si-Doped AlxGa1-xAs Layers Grown by MBEJapanese Journal of Applied Physics, 1982
- Observation of intersubband scattering in a 2-dimensional electron systemSolid State Communications, 1982
- Effective-mass theory of semiconductor heterojunctions and superlatticesSurface Science, 1982
- Planar enhancement mode two-dimensional electron gas FET associated with a low AlGaAs surface potentialElectronics Letters, 1982
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981
- Electronic Properties of Flat-Band Semiconductor HeterostructuresPhysical Review Letters, 1981
- Backside-gated modulation-doped GaAs-(AlGa)As heterojunction interfaceApplied Physics Letters, 1981
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972