Epitaxial growth of the nickel disilicide phase
- 1 August 1980
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 71 (1), 117-127
- https://doi.org/10.1016/0040-6090(80)90190-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A structure modeling of metal-silicide layers by using axial and planar channeling techniquesNuclear Instruments and Methods, 1978
- Separate estimate of crystalline orientations and scattering centers in polycrystals by backscattering techniqueJournal of Applied Physics, 1976
- Evaluation of glancing angle X-ray diffraction and MeV 4He backscattering analyses of silicide formationThin Solid Films, 1974
- Epitaxial Growth of Nickel Silicide NiSi2on SiliconJapanese Journal of Applied Physics, 1974
- Experimental techniques for observing dislocations by the Berg–Barrett methodActa Crystallographica Section A, 1968