TEM Studies of Plasma Deposited Tungsten and Tungsten Nitride Barriers for Thermally Stable Metallization
- 1 January 1993
- journal article
- Published by Springer Science and Business Media LLC in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Capture time versus barrier thickness in quantum-well structures measured by infrared photoconductive gainApplied Physics Letters, 1993
- Electron Spin Resonance Study of CuInSe2 Single CrystalsJapanese Journal of Applied Physics, 1993
- New method to improve the adhesion strength of tungsten thin film on silicon by W2N glue layerApplied Physics Letters, 1992
- New method to suppress encroachment by plasma-deposited β-phase tungsten nitride thin filmsApplied Physics Letters, 1991
- Plasma-enhanced chemical vapor deposition of low-resistive tungsten thin filmsApplied Physics Letters, 1991
- Preparation of Tungsten Nitride Film by CVD Method Using WF 6Journal of the Electrochemical Society, 1987
- Deposition of Titanilum Nitride Thin Films by Plasma Enhanced CVD and Reactive SputteringMRS Proceedings, 1986
- Properties and microelectronic applications of thin films of refractory metal nitridesJournal of Vacuum Science & Technology A, 1985