Production Technology for High-Yield, High-Performance GaAs Monolithic Amplifiers
- 1 December 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 33 (12), 1597-1602
- https://doi.org/10.1109/tmtt.1985.1133263
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Capacitively Coupled Traveling-Wave Power AmplifierIEEE Transactions on Microwave Theory and Techniques, 1984
- A Monolithic Direct-Coupled GaAs Amplifier with 12-GHz BandwidthIEEE Transactions on Microwave Theory and Techniques, 1984
- An 8-18 GHz Monolithic Two-Stage Low Noise AmplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- A 69 GHz Monolithic FET OscillatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Monolithic microwave amplifiers formed by ion implantation into LEC gallium arsenide substratesIEEE Transactions on Electron Devices, 1981