A Large-Signal Model for the GaAs MESFET
- 1 August 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 29 (8), 781-788
- https://doi.org/10.1109/tmtt.1981.1130447
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- A Technique for Predicting Large-Signal Performance of a GaAs MESFETIEEE Transactions on Microwave Theory and Techniques, 1978
- Two-dimensional numerical analysis of stability criteria of GaAs FET'sIEEE Transactions on Electron Devices, 1976
- Performance of GaAs MESFET Mixers at X BandIEEE Transactions on Microwave Theory and Techniques, 1976
- Design and Performance of X-Band Oscillators with GaAs Schottky-Gate Field-Effect TransistorsIEEE Transactions on Microwave Theory and Techniques, 1975
- Current saturation and small-signal characteristics of GaAs field-effect transistorsIEEE Transactions on Electron Devices, 1973
- Two-Dimensional Distributed Theory Schottky Barrier Field Effect for a Microwave TransistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1973
- A two-dimensional numerical FET model for DC, AC, and large-signal analysisIEEE Transactions on Electron Devices, 1973
- Voltage-current characteristics of GaAs J-FET's in the hot electron rangeSolid-State Electronics, 1970
- Computer Aided Two-dimensional Analysis of the Junction Field-effect TransistorIBM Journal of Research and Development, 1970
- General theory for pinched operation of the junction-gate FETSolid-State Electronics, 1969