A simple model for the MOS transistor in saturation
- 1 June 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (6), 591-596
- https://doi.org/10.1016/0038-1101(86)90139-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- A parametric short-channel MOS transistor model for subthreshold and strong inversion currentIEEE Transactions on Electron Devices, 1984
- Small-signal MOSFET models for analog circuit designIEEE Journal of Solid-State Circuits, 1982
- Potential of MOS technologies for analog integrated circuitsIEEE Journal of Solid-State Circuits, 1978
- Accurate two sections model for MOS transistor in saturationSolid-State Electronics, 1976
- A simple theory to predict the threshold voltage of short-channel IGFET'sSolid-State Electronics, 1974
- An accurate large-signal MOS transistor model for use in computer-aided designIEEE Transactions on Electron Devices, 1972
- Drift velocity saturation in MOS transistorsIEEE Transactions on Electron Devices, 1970
- Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST)IEEE Transactions on Electron Devices, 1965