Investigation of neutralized (NH4)2S solution passivation of GaAs (100) surfaces
- 24 November 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (21), 3081-3083
- https://doi.org/10.1063/1.120252
Abstract
Synchrotron radiation photoelectron spectroscopy combined with scanning electron microscopy (SEM) and gravimetry has been used to study GaAs (100) surfaces treated with a neutralized (NH4)2S solution. Compared to the conventional basic (NH4)2S solution treatment, a thick Ga sulfide layer and strong Ga–S bond were formed on the GaAs surface after dipping GaAs wafers in a neutralized (NH4)2S solution. Gravimetric data show that the etching rate of GaAs in the neutralized (NH4)2S solution is about 15% slower than that in the conventional (NH4)2S solution. From SEM observation, fewer etching pits with smaller sizes were found on the neutralized (NH4)2S-treated GaAs surface.Keywords
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