Ion mixing of markers in SiO2 and Si
- 1 January 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (1), 45-47
- https://doi.org/10.1063/1.94546
Abstract
The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of thin metal markers due to irradiation with 300‐keV Xe+ ions. In SiO2, the mixing efficiency appears to be independent of the chemical nature of marker atoms and can be explained in terms of a linear cascade model. In Si, the mixing is found to correlate with thermally activated diffusivities of the marker species.Keywords
This publication has 11 references indexed in Scilit:
- Ion MixingAnnual Review of Materials Science, 1983
- Chemical effects in ion mixing of transition metals on SiO2Nuclear Instruments and Methods in Physics Research, 1983
- Impurity profile broadening and shifts by ion beam mixingJournal of Applied Physics, 1982
- Ion beam mixing in amorphous silicon II. Theoretical interpretationNuclear Instruments and Methods, 1981
- Ion beam mixing in amorphous silicon I. Experimental investigationNuclear Instruments and Methods, 1981
- Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structuresNuclear Instruments and Methods, 1981
- Theoretical aspects of atomic mixing by ion beamsNuclear Instruments and Methods, 1981
- The depth resolution of sputter profilingApplied Physics A, 1979
- Radiation effects on solid state diffusionThin Solid Films, 1975
- Diffusivity Summary of B, Ga, P, As, and Sb in SiO[sub 2]Journal of the Electrochemical Society, 1973