Nitrogen−implanted silicon. I. Damage annealing and lattice location

Abstract

The radiation damage and implanted atom location properties of nitrogen−implanted silicon have been studied. Helium−ion backscattering has been used to measure the damage for samples implanted at various doses and annealed to temperatures as high as 900 °C. The location of the implanted nitrogen in the silicon lattice has been investigated by using the ¹⁵N(p,α)¹²C nuclear reaction together with channeling techniques. The results indicate that ≳90% of the implanted atoms are located in nonsubstitutional positions in the silicon lattice, and that the implanted nitrogen has not outdiffused for anneals to 1185 °C. The results presented here will be used in Paper II to help explain many of the observed electrical porperties of nitrogen−implanted silicon.