Epitaxial silicon layers grown on ion-implanted silicon nitride layers

Abstract

Buried layers of silicon nitride approximately 4000 Å in width have been formed by ion implantation while retaining a relatively undamaged silicon surface region. Epitaxial silicon of 2‐μm thickness grown on these surfaces exhibits significantly lower defect concentrations than do silicon layers on spinel, as determined by optical microscopy and by proton channeling measurements. The breakdown voltage of the silicon nitride layers is approximately 7 × 10⁵ V/cm, and the refractive index is 2.05 at 6328 Å.