Effects of Si/Ge multilayered structures on bi projected range distributions
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 21-24
- https://doi.org/10.1016/s0168-583x(87)80007-1
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Ion implantation distributions in inhomogeneous materialsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Strained-Layer Epitaxy of Germanium-Silicon AlloysScience, 1985
- Characterization of damage in ion implanted GeApplied Physics Letters, 1982
- Backscattering measurements of implanted ion distributions in double-layer structuresJournal of Applied Physics, 1980
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Ion implantation distributions in inhomogeneous materialsApplied Physics Letters, 1977