Spectrometer performance of n-type cadmium telluride x- and γ-ray detectors
- 1 February 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 23 (1), 171-176
- https://doi.org/10.1109/TNS.1976.4328232
Abstract
Highly perfect n-type CdTe single crystals grown by the sealed-ingot-zone refining method have been used to fabricate semiconductor surface-barrier detectors for X- and low-energ, γ-ray analysis. An energy resolution of 2.0 keV /fwhm/ and 1.5 keV /fwhm/ was achieved for 59.5 keV γ-rays from 241 Am and 5.9 keV characteristic K X-ray line from 55 Fe source, respectively. Spectra were measured at room temperature with low detector bias. The observed full energy peak of 59.5 keV γ-rays has been compared with the teoretical peak calculated for a surface-barrier junction with fixed space charge, the trapping effects being taken into account.Keywords
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