Modeling of MOS transistors with nonrectangular-gate geometries
- 1 August 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (8), 1261-1269
- https://doi.org/10.1109/t-ed.1982.20865
Abstract
The dc electrical characteristics of MOS transistors with nonrectangular-gate geometries are investigated. Closed-form analytical expressions relating the terminal characteristics to the geometric parameters are presented for several gate geometries including the trapezoid, "V," "L," and annulus. Experimental results based upon a specially fabricated NMOS test bar containing these nonrectangular devices are presented. A comparison of the theoretical and experimental results is made which shows close agreement.Keywords
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