Displacement phenomena of boron acceptors in 6H SiC
- 1 April 1966
- journal article
- Published by Elsevier in Physics Letters
- Vol. 20 (6), 623-624
- https://doi.org/10.1016/0031-9163(66)91144-9
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Electron Spin Resonance Parameters in 6H Polytype of Silicon Carbide Crystal Doped with BoronJournal of the Physics Society Japan, 1965
- Electron Spin Resonance Studies in SiCPhysical Review B, 1961