A simple new method for the investigation of process latitude in E-beam lithography with positive resists
- 30 June 2000
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 53 (1-4), 333-336
- https://doi.org/10.1016/s0167-9317(00)00327-0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A new e-beam method for grey scale 3D optical elementsMicroelectronic Engineering, 1999
- Optimized process for electron beam nanolithography using AZPN114 chemically amplified resistMicroelectronic Engineering, 1997
- A systematic characterization of AZPN114 electron beam resistMicroelectronic Engineering, 1994