A novel heavily doped drift - auxiliary cathode lateral insulated gate transistor structure
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- The insulated gate transistor: A new three-terminal MOS-controlled bipolar power deviceIEEE Transactions on Electron Devices, 1984
- Lateral resurfed COMFETElectronics Letters, 1984