The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device
- 1 June 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 31 (6), 821-828
- https://doi.org/10.1109/t-ed.1984.21614
Abstract
A new three-terminal power device, called the insulated gate transistor (IGT), with voltage-controlled output characteristics is described. In this device, the best features of the existing families of bipolar devices and power MOSFET's are combined to achieve optimal device characteristics for low-frequency power-control applications. Devices with 600-V blocking capability fabricated using a vertical DMOS process exhibit 20 times the conduction current density of an equivalent power MOSFET and five times that of an equivalent bipolar transistor operating at a current gain of 10. Typical gate turn-off times have been measured to range from 10 to 50 µs.Keywords
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