Low-loss AlxGa1−xAs waveguides grown by molecular beam epitaxy
- 15 April 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (8), 456-458
- https://doi.org/10.1063/1.88797
Abstract
Low‐loss AlxGa1−xAs waveguides with x=0.1 and x=0.25 have been fabricated by molecular beam epitaxy. Losses are determined for both n‐ and p‐type waveguides using a combination of Raman scattering and transmission measurements. These waveguides have optical losses ⩽1.5 cm−1 between 1.1 and 1.4 eV, the energy of the GaAs double heterostructure laser, and are comparable to similar waveguide structures grown by liquid phase epitaxy.Keywords
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