Electronic Structure and Optical Properties of Si, Ge, and Sn
- 15 February 1969
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 178 (3), 1358-1364
- https://doi.org/10.1103/physrev.178.1358
Abstract
The electronic band structure and optical constants of Si, Ge, and Sn are calculated using the empirical pseudopotential method. The results are compared with experiment.
Keywords
This publication has 20 references indexed in Scilit:
- Optical Properties of Si, Ge, and Sn from 0.6 to 11.0 eV at 77°KPhysical Review B, 1969
- Electroreflectance Measurements on Si, Ge, and SnPhysical Review B, 1968
- Band Structure and Ultraviolet Optical Properties of Sodium ChloridePhysical Review Letters, 1968
- Pseudopotential Calculation of the Optical Constants of MgO from 7-28 eVPhysical Review B, 1968
- Electronic Structure and Optical Properties of Hexagonal CdSe, CdS, and ZnSPhysical Review B, 1967
- Analysis of the optical properties and electronic structure of SnTe using the empirical pseudopotential methodSolid State Communications, 1967
- Pseudopotential calculation of ϵ2 for the zincblende structure: GaAsSolid State Communications, 1967
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Reflectance and Photoemission From SiPhysical Review Letters, 1962
- Critical Points and Ultraviolet Reflectivity of SemiconductorsPhysical Review Letters, 1962