Initial Growth Conditions of GaAs on (100) Si Grown by Migration-Enhanced Epitaxy
- 1 March 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (3A), L283-286
- https://doi.org/10.1143/jjap.27.l283
Abstract
This paper investigates the effect of initial growth conditions on the structural and optical properties of GaAs and (AlGa)As/GaAs quantum well heterostructures (QWH) on (100)Si. Samples are grown by migration-enhanced epitaxy (MEE) at 300°C. Only the growth conditions of the first GaAs monolayer on Si substrates are varied. Optimization requires: 1) no exposure of the hot Si surface to As, and 2) Ga-dominated initial growth conditions. Sharp low-temperature excitonic luminescence (8.0 meV (FWHM) for L z=2 nm) confirms the smooth heterointerfaces of the MEE-grown layers. Samples grown by conventional MBE at 300°C show a clearly poorer crystal quality.Keywords
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