Q-switched ruby laser alloying of Ohmic contacts on gallium arsenide epilayers
- 15 August 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (4), 346-347
- https://doi.org/10.1063/1.90331
Abstract
Ohmic contacts of AuGe have been produced on GaAs epilayers by laser alloying. The contacts possess morphological and electrical properties which are superior to those formed by conventional alloying.Keywords
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