Temperature dependence of the velocity/field characteristic of electrons in InP
- 1 January 1975
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 11 (4), 80-81
- https://doi.org/10.1049/el:19750060
Abstract
Previous calculations of the velocity/field characterisitcs of electrons in indium phosphide at room temperature have been extended to cover the temperature range 200–500 K. Preliminary results for the diffusion coefficients are presented.Keywords
This publication has 1 reference indexed in Scilit:
- Temperature dependence of the subthreshold velocity/field characteristic for epitaxial InPElectronics Letters, 1975