Temperature dependence of the subthreshold velocity/field characteristic for epitaxial InP
- 1 January 1975
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 11 (4), 81-82
- https://doi.org/10.1049/el:19750061
Abstract
The subthreshold electron-drift-velocity/field characteristic for epitaxial InP has been measured over the temperature range 118–446 K. The threshold field of H-shaped devices is found to increase from 8 to 12.3 kV/cm and the peak velocity to decrease monotonically from 3.3×107 to 1.9×107 cm/s over this temperature interval.Keywords
This publication has 1 reference indexed in Scilit:
- Temperature dependence of the velocity/field characteristic of electrons in InPElectronics Letters, 1975