Traps created at the interface between the nitride and the oxide on the nitride by thermal oxidation

Abstract

Traps introduced by thermal oxidation of a thin nitride film have been investigated using metal-oxide (top-oxide)-nitride-oxide-semiconductor memory diodes. Memory properties as a function of the initial nitride thickness before thermal oxidation and the top-oxide thickness have revealed that the newly created traps are situated mostly at the top-oxide-nitride interface. The density of the traps is estimated to be (1.6±0.2)×1013/cm2 independent of the initial nitride thickness and the top-oxide thickness.