Discharge of MNOS structures
- 31 July 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (7), 811-IN1
- https://doi.org/10.1016/0038-1101(73)90178-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Tunneling to traps in insulatorsJournal of Applied Physics, 1972
- MNOS memory transistors in simple memory arraysIEEE Journal of Solid-State Circuits, 1972
- Properties of MNOS structuresIEEE Transactions on Electron Devices, 1972
- Carrier trapping hysteresis in MOS transistorsPhysica Status Solidi (a), 1970
- Thin Tunnelable Layers of Silicon Dioxide Formed by Oxidation of SiliconJournal of the Electrochemical Society, 1970
- Theory of the thin-oxide m.n.o.s. memory transistorElectronics Letters, 1970
- Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) StructuresJournal of Applied Physics, 1969
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969
- Electrical Characteristics of Silicon Nitride Films Prepared by Silane‐Ammonia ReactionJournal of the Electrochemical Society, 1968