Measurement of intrinsic capacitances of MOS transistors

Publisher Website

1 January 1982

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/isscc.1982.1156289

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Transient analysis of MOS transistors
IEEE Transactions on Electron Devices, 1980
Relation between incremental intrinsic capacitances and transconductances in MOS transistors
IEEE Transactions on Electron Devices, 1980

Cited by 14 articles