Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing
- 14 April 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (15), 2028-2030
- https://doi.org/10.1063/1.118773
Abstract
Interfacial characteristics of Al/SiO 2 /n -type 6H–SiC metal–oxide–semiconductor capacitors fabricated by rapid thermal processing (RTP) with N 2 O and NO annealing are investigated. Interface state density was measured by a conductance technique at room temperature. RTP oxidation in pure O 2 leads to an excellent SiO 2 /n -type 6H–SiC interface with interface state density in the order of 10 10 –10 11 eV −1 cm −2 . NO annealing improves the SiO 2 /n -type 6H–SiC interface, while N 2 O annealing increases the interface state density.Keywords
This publication has 17 references indexed in Scilit:
- Furnace gas-phase chemistry of silicon oxynitridation in N2OApplied Physics Letters, 1996
- Technique for monitoring slow interface trap characteristics in MOS capacitorsElectronics Letters, 1995
- Thermal Oxidation of SiC in N 2 OJournal of the Electrochemical Society, 1994
- Electrical properties of thermal oxide grown using dry oxidation on p-type 6H-silicon carbideApplied Physics Letters, 1994
- High quality ultrathin dielectric films grown on silicon in a nitric oxide ambientApplied Physics Letters, 1994
- SiC MOS interface characteristicsIEEE Transactions on Electron Devices, 1994
- Furnace formation of silicon oxynitride thin dielectrics in nitrous oxide (N2O): The role of nitric oxide (NO)Journal of Applied Physics, 1994
- Thermal oxidation and electrical properties of silicon carbide metal-oxide-semiconductor structuresJournal of Applied Physics, 1993
- The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applicationsProceedings of the IEEE, 1991
- Dopant Redistribution during Thermal Oxidation of Monocrystalline Beta ‐ SiC Thin FilmsJournal of the Electrochemical Society, 1989