Growth processes in the initial stages of deposition of Ge films on (100) Si surfaces by GeH4 source molecular beam epitaxy
- 31 January 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 99 (1-4), 254-258
- https://doi.org/10.1016/0022-0248(90)90522-m
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology (63460055)
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