In situ infrared characterisation of the interfacial oxide during the anodic dissolution of a silicon electrode in fluoride electrolytes
- 1 September 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 365 (1), 1-14
- https://doi.org/10.1016/0039-6028(96)80111-7
Abstract
No abstract availableThis publication has 38 references indexed in Scilit:
- Light Emission Effect in Anodic Oxidation of SiJournal of the Electrochemical Society, 1993
- Ionic processes through the interfacial oxide in the anodic dissolution of siliconElectrochimica Acta, 1992
- A voltammetric study of the anodic dissolution of p-Si in fluoride electrolytesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1991
- Ideal hydrogen termination of the Si (111) surfaceApplied Physics Letters, 1990
- Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphologyApplied Physics Letters, 1988
- X-ray topographic characterization of porous silicon layersJournal of Crystal Growth, 1984
- Structure of Porous Silicon Layer and Heat‐Treatment EffectJournal of the Electrochemical Society, 1978
- Formation and Properties of Porous Silicon FilmJournal of the Electrochemical Society, 1977
- Electropolishing Silicon in Hydrofluoric Acid SolutionsJournal of the Electrochemical Society, 1958
- Electrolytic Shaping of Germanium and SiliconBell System Technical Journal, 1956