Elimination of dark line defects in lattice-mismatched epilayers through use of strained-layer superlattices
- 1 September 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (5), 482-484
- https://doi.org/10.1063/1.96099
Abstract
The microscopic optical quality of thick (∼1 μm) III-V semiconductor epitaxial layers, mismatched to their substrates, is examined by photoluminescence microimaging. The layers include several kinds of strained-layer superlattices (GaP/GaAsxP1−x, GaAs/GaAs1−xPx, and GaAs/InxGa1−xAs) and associated alloys. Microscopic images of epilayer luminescence directly reveal the presence of misfit dislocations which appear as dark line defects. These defects can be completely eliminated in the strained-layer superlattices if these structures have thin layers, less than the critical thickness for elastic accommodation, and sufficient numbers of interfaces of block threading dislocations.Keywords
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