Optical Reflection Studies of Damage in Ion Implanted Silicon
- 1 January 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (1), 246-251
- https://doi.org/10.1063/1.1658329
Abstract
Optical (3–6.5 eV) reflection spectra are presented for crystalline Si implanted at room temperature with 40 keV Sb ions to doses of less than 2×1015/cm2. These spectra, and their deviation from the reflection spectrum of crystalline Si, are discussed in terms of a model based on the average dielectric properties of the implanted region. For samples having a high ion dose (>1015/cm2) the observed spectra resemble the spectra of sputtered Si films. Anneal characteristics of the reflection spectra are found to be dose dependent. These observations are compared to, and found to substantiate, the results of other experimental techniques for studying lattice damage in Si.This publication has 9 references indexed in Scilit:
- DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATIONApplied Physics Letters, 1969
- ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN THE 1 TO 6 eV REGIONApplied Physics Letters, 1969
- Observation of ion bombardment damage in siliconPhilosophical Magazine, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967
- Scattering of Waves by a Medium with Strong Fluctuations of Refractive IndexRadio Science, 1967
- Conversion of crystalline germanium to amorphous germanium by ion bombardmentPhilosophical Magazine, 1965
- Optical Properties of SemiconductorsPhysical Review B, 1963
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955
- Die Bestimmung der optischen Konstanten von Metallen im sichtbaren und ultravioletten Teil des SpektrumsAnnalen der Physik, 1926