Imaging of dislocations in InP using transmission cathodoluminescence
- 15 November 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (10), 784-786
- https://doi.org/10.1063/1.90978
Abstract
We present an exact one‐to‐one correspondence between grown‐in dislocations revealed as etch pits and dark spots observed on transmission cathodoluminescence images of InP. This correspondence has been demonstrated for heavily tellurium‐ and sulfur‐doped InP. This is the first time that dislocations have been identified and imaged in InP using a luminescence technique.Keywords
This publication has 13 references indexed in Scilit:
- Evaluation of defects in InP and InGaAsP by transmission cathodoluminescenceJournal of Applied Physics, 1979
- The characterization of highly-zinc-doped InP crystalsApplied Physics Letters, 1979
- Transmission cathodoluminescence: A new SEM technique to study defects in bulk semiconductor samplesApplied Physics Letters, 1979
- GaInAsP/InP avalanche photodiodesApplied Physics Letters, 1978
- Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ mApplied Physics Letters, 1976
- Effect of dopants on transmission loss of low-OH-content optical fibresElectronics Letters, 1976
- X-ray topographic study of dark-spot defects in GaAs-Ga1−xAlxAs double-heterostructure wafersApplied Physics Letters, 1975
- Effect of dislocations on green electroluminescence efficiency in GaP grown by liquid phase epitaxyJournal of Applied Physics, 1975
- Révélation métallographique des défauts cristallins dans InPJournal of Crystal Growth, 1975
- Zero material dispersion in optical fibresElectronics Letters, 1975