Impurity Distribution in Epitaxial Growth
- 1 March 1965
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (3), 802-810
- https://doi.org/10.1063/1.1714223
Abstract
A solid‐state diffusion theory is developed giving the distribution of impurities in epitaxial growth. It is shown that for most practical cases this theory takes on a particularly simple form. Extensive experiments were performed in the study of the distribution of the most common acceptor and donor type substrate impurities in silicon: boron and antimony. It is shown that the impurity distribution in most of the epitaxial film is uniform corresponding to the impurity doping of the SiCl4 used in the epitaxial growth, and that the profile near the substrate—film interface is very close to the predictions of this simple theory. In addition, certain particular cases of interest were studied such as the spreading of a layer of impurities predeposited on the substrate surface prior to epitaxial growth, the effect of film growth rate on the impurity distribution, and the change in the impurity distribution during an additional high‐temperature step. In all cases, experiments and the solid‐state diffusion theory are in excellent agreement.Keywords
This publication has 11 references indexed in Scilit:
- Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of SiliconJournal of Applied Physics, 1964
- Epitaxial Silicon JunctionsJournal of the Electrochemical Society, 1963
- A Kinetic Theory for Autodoping for Vapor Phase Epitaxial Growth of GermaniumJournal of the Electrochemical Society, 1963
- Impurity Distribution in Epitaxial Silicon FilmsJournal of the Electrochemical Society, 1962
- Anomalous Impurity Diffusion in Epitaxial Silicon near the SubstrateJournal of the Electrochemical Society, 1962
- The Influence of the Active Surface on the Cathodic Reduction of MnO[sub 2]Journal of the Electrochemical Society, 1962
- Diffusion of Gallium in SiliconJournal of Applied Physics, 1958
- Rate Limitation at the Surface for Impurity Diffusion in SemiconductorsPhysical Review B, 1956
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956
- On the Distribution of Impurity in Crystals Grown from Impure Unstirred MeltsProceedings of the Physical Society. Section B, 1955