III-V diluted magnetic semiconductor: Substitutional doping of Mn in InAs

Abstract

Local structures around Mn in ${\mathrm{In}}_{1\mathrm{-}\mathit{x}}$ ${\mathrm{Mn}}_{\mathit{x}}$As films grown by molecular-beam epitaxy have been studied by using Mn K-edge extended x-ray-absorption fine-structure (EXAFS) technique. Substitution of Mn atoms for the In sites is found in samples either grown at low substrate temperatures (near 200 °C) or with a low Mn concentration (about 1 at. %). This result represents a significant extension of an earlier EXAFS study and serves as direct experimental evidence for III-V diluted magnetic semiconductors obtained by substitutional doping of Mn impurities in InAs. © 1996 The American Physical Society.