Evidence of intermixing at Si(III)/Au interface at liquid nitrogen temperature
- 10 November 1980
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 80 (1), 69-71
- https://doi.org/10.1016/0375-9601(80)90457-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Presence of critical Au-Film thickness for room temperature interfacial reaction between Au(film) and Si(crystal substrate)Solid State Communications, 1980
- Ultraviolet photoelectron investigation of Si(111)/Au interface at high temperaturesSolid State Communications, 1980
- Photoemission studies of the silicon-gold interfacePhysical Review B, 1979
- LEED-AES study of the AuSi(100) systemSurface Science, 1979
- Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiationPhysical Review B, 1978
- New phenomena in Schottky barrier formation on III–V compoundsJournal of Vacuum Science and Technology, 1978
- Evidence for a new type of metal-semiconductor interaction on GaSbPhysical Review B, 1978
- Formation, structure, and orientation of gold silicide on gold surfacesJournal of Applied Physics, 1976