Presence of critical Au-Film thickness for room temperature interfacial reaction between Au(film) and Si(crystal substrate)
- 31 May 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 34 (6), 493-497
- https://doi.org/10.1016/0038-1098(80)90659-6
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Electronic States near Metal-Insulator InterfaceJournal of the Physics Society Japan, 1978
- AES study of the very first stages of condensation of gold films on silicon (111) surfacesSurface Science, 1977
- Room-temperature interfacial reaction in Au-semiconductor systemsApplied Physics Letters, 1977
- Electron energy loss spectroscopy of the Si(111)—simple-metal interfacePhysical Review B, 1977
- Surface-State Transitions of Silicon in Electron Energy-Loss SpectraPhysical Review Letters, 1973
- A model for the Auger electron spectroscopy of systems exhibiting layer growth, and its application to the deposition of silver on nickelSurface Science, 1973
- Microscopic theory of covalent-ionic transition at metal-semiconductor interfacesSolid State Communications, 1973
- Diffuse interface in Si (substrate)-Au (evaporated film) systemApplied Physics Letters, 1973