Orientation dependence of the zinc distribution coefficient in the liquid-phase epitaxy of gallium arsenide
- 30 June 1971
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (6), 526-528
- https://doi.org/10.1016/0038-1101(71)90067-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Institute of physics and the physical societyVacuum, 1968
- On the influence of crystal orientation on solution-grown GaAs laser diodesIEEE Journal of Quantum Electronics, 1968
- Hall Effect and Resistivity of Zn-Doped GaAsJournal of Applied Physics, 1966
- The Effect of Orientation on the Electrical Properties of Epitaxial Gallium ArsenideJournal of the Electrochemical Society, 1964
- An Electrochemical Method for the Preparation of AuSn and Its Possible Application to Other Intermetallic CompoundsJournal of the Electrochemical Society, 1962